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Novel process for integration of optoelectronic devices using reactive ion etching without chlorinated gas

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2 Author(s)
L. Henry ; CNET Lannion B, LAB/ICM/TOH, Lannion, France ; P. Granjoux

A new process for RIE of III¿V compound semiconductors using mixtures of CH4, Ar and H2 as the etching gas is presented. This process can be successfully applied to most III-V materials used in micro-optoelectronic technology

Published in:

Electronics Letters  (Volume:23 ,  Issue: 24 )