Referenced Items are not available for this document.
A new process for RIE of III¿V compound semiconductors using mixtures of CH4, Ar and H2 as the etching gas is presented. This process can be successfully applied to most III-V materials used in micro-optoelectronic technology
Published in:
Electronics Letters
(Volume:23
,
Issue:
24
)
Date of Publication: November 19 1987
- ISSN :
- 0013-5194
- Digital Object Identifier :
- 10.1049/el:19870870
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 11 July 2007
- Issue Date :
- November 19 1987
- Sponsored by :
- Institution of Engineering and Technology
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