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High-speed GaInAsP/InP buried-heterostructure optical intensity modulator with semi-insulating InP burying layers

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4 Author(s)
Soda, H. ; Fujitsu Laboratories Ltd., Atsugi, Japan ; Nakai, K. ; Ishikawa, H. ; Imai, H.

GaInAsP/InP buried-heterostructure (BH) optical intensity modulators have been fabricated by the use of Fe-doped semi-insulating InP burying layers. The reduction of a parasitic capacitance due to the semi-insulating burying layers realised a wide modulation bandwidth of 11.2GHz. At a wavelength of 1.53/¿m, an attenuation ratio of 20 dB at 26°C was achieved with an applied voltage of ¿8.5 V.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 23 )