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Room-temperature operation of Ga0.47In0.53As/AI0.48In0.52As resonant tunnelling diodes

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3 Author(s)
Sen, S. ; AT&T Bell Laboratories, Murray Hill, USA ; Capasso, F. ; Hutchinson, A.L.

The first room-temperature operation of Ga0.47In0.53As/Al0.48In0.52As resonant tunnelling (RT) diodes is reported. The peak/valley ratio of the current is as high as 4:1 at room temperature and is 15:1 at 80 K. These are the highest values of peak/valley ratio at the respective temperatures, reported so far, in this material system. The position of the peak in the current/voltage characteristic also showed good agreement with that obtained from an electron tunnelling transmission calculation.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 23 )

Date of Publication:

November 5 1987

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