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Uniformity of threshold voltage for MESFETs fabricated on VGF GaAs substrates

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3 Author(s)
C. L. Reynolds ; AT&T Bell Laboratories, Reading, USA ; W. C. Gibson ; J. E. Clemans

Improved uniformity of threshold voltage is shown for MESFETs fabricated on GaAs substrates grown by a novel vertical gradient freeze technique when compared to devices fabricated on LEC GaAs substrates. The improved uniformity is most likely related to the decreased dislocation density and reduced impurity clustering in the VGF material.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 23 )