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New tungsten silicide thin-film resistor technology applied to GaAs integrated circuits

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3 Author(s)
Allan, D.A. ; British Telecom Research Laboratories, Compound Semiconductor Microelectronics Section, Ipswich, UK ; Gilbert, M.J. ; O'Sullivan, P.J.

Tungsten silicide resistors in the range 50¿300 ¿ sheet resistance have been deposited on GaAs by RF sputtering and patterned by etching in an SF6 plasma. High-temperature stability has been demonstrated and a change in resistance of less than 01% after lOOOh at 125°C achieved with passivated resistors.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 23 )

Date of Publication:

November 5 1987

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