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Browse Journals & Magazines > Electronics Letters ...> Volume:23 Issue:23 Help

New tungsten silicide thin-film resistor technology applied to GaAs integrated circuits

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3 Author(s)
Allan, D.A. ; British Telecom Research Laboratories, Compound Semiconductor Microelectronics Section, Ipswich, UK ; Gilbert, M.J. ; O'Sullivan, P.J.

Tungsten silicide resistors in the range 50¿300 ¿ sheet resistance have been deposited on GaAs by RF sputtering and patterned by etching in an SF6 plasma. High-temperature stability has been demonstrated and a change in resistance of less than 01% after lOOOh at 125°C achieved with passivated resistors.

Published in:
Electronics Letters  (Volume:23 ,  Issue: 23 )

Date of Publication: November 5 1987

Page(s):
1216 - 1218
ISSN :
0013-5194
Digital Object Identifier :
10.1049/el:19870847
Product Type:
Journals & Magazines
Date of Current Version :
11 July 2007
Issue Date :
November 5 1987
Sponsored by :
Institution of Engineering and Technology

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