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Fully ion-implanted abrupt pn junction on semi-insulating InP

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3 Author(s)
Wang, K.-W. ; AT&T Bell Laboratories, Murray Hill, USA ; Cheng, C.L. ; Zima, S.M.

We report a fully ion-implanted pn junction using Si for n-implant and P/Be co-implant for a shallow p+ surface layer. C/V measurements indicate abrupt junction behaviour. Mesa diodes were fabricated and showed an ideality factor of two, small leakage current and avalanche breakdown at reverse bias greater than 40 V.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 20 )