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Out-diffusion and reactivation of Zn in InP substrates

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2 Author(s)
H. Jung ; AEG Aktiengesellschaft, Forschungsinstitut Ulm, Ulm, West Germany ; P. Marschall

The influence of temperature on p-doping in Zn-diffused InP substrates has been investigated. By cooling the diffused InP samples very slowly after diffusion or subjecting them to heat treatment, significant out-diffusion of Zn has been observed. By heat-treating with rapid cooling, a substantial fraction of the incorporated but electrically inactive Zn atoms can be reactivated, resulting in a drastically increased acceptor concentration.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 19 )