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High-performance GaAs power MESFET with AlGaAs buffer layer

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4 Author(s)
Kim, B. ; Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA ; Wurtele, M. ; Shih, H.D. ; Tserng, H.Q.

The performance of a power MESFET has been significantly improved by using an AlGaAs heterobuffer. The conduction-band discontinuity at the heterointerface acts as a potential barrier for electron confinement; the RF conversion efficiency and power gain of the FET were very high compared with a standard MESFET. We have achieved 41% power-added efficiency with 0.88 W/mm power density at 21.5 GHz and 30% efficiency with 0.56 W/mm at 35 GHz.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 19 )

Date of Publication:

September 10 1987

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