By Topic

High-power operation of a transverse-mode stabilised AlGaInp visible light (λL = 683 nm) semiconductor laser

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
H. Fujii ; NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan ; K. Kobayashi ; S. Kawata ; A. Gomyo
more authors

Continuous-wave (CW), stable fundamental-mode operation, up to 20 mW, was achieved with transverse-mode stabilised MOVPE-grown AlGaInP visible-light (λL = 683 nm) lasers. The CW threshold current was 67 mA and the external quantum efficiency was 41%. Up to 27 mW CW power was obtained from this laser diode.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 18 )