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Fully implanted GaAs millimetre-wave mixer diode using high energy implantation

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5 Author(s)
P. Thompson ; Naval Research Laboratory, Washington, USA ; H. Dietrich ; Y. Anand ; V. Higgins
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Fully implanted GaAs millimetre-wave planar mixer diodes, suitable for monolithic integration, have been fabricated and tested. Multiple energy implantation, having a maximum energy of 6 MeV, was used to form the 3 ¿m-thick active layer. The DC and RF characteristics were comparable to state-of-the-art GaAs mixer diodes fabricated on epitaxial layers.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 14 )