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CMOS on local SOI using SIMOX technology

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3 Author(s)
S. Matsumoto ; NTT Electrical Communications Laboratories, Atsugi, Japan ; T. Ohno ; K. Izumi

CMOS on local SOI, in which n-MOS/bulk and p-MOS/SOI can be selectively implemented on the same chip, has been developed. SOI regions are formed by SIMOX technology, while bulk regions are prepared by etching of the buried SiO2. A CMOS inverter fabricated on local SOI shows good transfer characteristics.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 11 )