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Improved AlGaAs/GaAs HBT performance by InGaAs emitter cap layer

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5 Author(s)
Nagata, K. ; NTT Electrical Communications Laboratories, Atsugi, Japan ; Nakajima, O. ; Nittono, T. ; Ito, H.
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The effects of the emitter resistance reduction on the DC and high-frequency characteristics in an AIGaAs/GaAs HBT with an InGaAs emitter cap layer are investigated. In fabricated devices, a transconductance per unit area of 16mS/¿m2 and a cutoff frequency of 80 GHz have been achieved.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 11 )