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Laser recrystallised SOI with periodical seeding filled by selective epitaxial growth

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6 Author(s)
Regolini, J.L. ; Centre National d'Etudes des Télécommunications, Meylan, France ; Dutartre, D. ; Bensahel, D. ; Karapiperis, L.
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A periodic seeding technique for obtaining thin silicon films on an insulator (SOI) by laser recrystallisation is described. Two types of seed structure as well as their orientations relative to the scan direction are discussed. Geometrical parameters are optimised to obtain 35¿m-wide defect-free SOI stripes across 4in (101-6mm) silicon wafers.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 10 )

Date of Publication:

May 7 1987

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