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Using oxide sidewall taper to improve breakdown voltage in planar junction of DMOS devices by a simple process

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5 Author(s)
Lu, C.Y. ; AT&T Bell Laboratories, Reading, USA ; Riffe, P.C. ; Tsai, N.S. ; Ahrens, R.E.
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Argon ion implantation was used to create a damaged surface layer on field oxide. Subsequent oxide etching created a tapered oxide transition from thin oxide to thick field oxide. This structure effectively improves the breakdown voltage of the planar junction of a DMOS device which makes use of a poly field plate to enhance the breakdown voltage. The process is simple, reproducible and introduces no new mask steps.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 8 )