Referenced Items are not available for this document.
Argon ion implantation was used to create a damaged surface layer on field oxide. Subsequent oxide etching created a tapered oxide transition from thin oxide to thick field oxide. This structure effectively improves the breakdown voltage of the planar junction of a DMOS device which makes use of a poly field plate to enhance the breakdown voltage. The process is simple, reproducible and introduces no new mask steps.
Published in:
Electronics Letters
(Volume:23
,
Issue:
8
)
Date of Publication: April 9 1987
- Page(s):
- 407 - 408
- ISSN :
- 0013-5194
- Digital Object Identifier :
- 10.1049/el:19870296
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 11 July 2007
- Issue Date :
- April 9 1987
- Sponsored by :
- Institution of Engineering and Technology
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