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Browse Journals & Magazines > Electronics Letters ...> Volume:23 Issue:8 Help

GaAs monolithic microwave integrated circuit trimming using laser-direct-written tungsten microstrip lines

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7 Author(s)
Chen, C.L. ; Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, USA ; Black, J.G. ; Mahoney, L.J. ; Doran, S.P.
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Laser-direct-write deposition of tungsten has been investigated as a technique for postfabrication trimming of GaAs monolithic microwave integrated circuits. Tungsten microstrip lines of 30 ¿¿ cm resistivity are deposited via a vapour-phase reaction induced by a focused argon-ion laser beam Lines of 1.8 ¿m thickness and 50¿m width written on a semi-insulating GaAs substrate have a loss of 2.6 dB/cm at 16GHz. This trimming technique is proposed as a practical and accurate method for the optimisation of high-frequency GaAs circuits.

Published in:
Electronics Letters  (Volume:23 ,  Issue: 8 )

Date of Publication: April 9 1987

Page(s):
402 - 403
ISSN :
0013-5194
Digital Object Identifier :
10.1049/el:19870293
Date of Current Version :
11 July 2007
Issue Date :
April 9 1987
Sponsored by :
Institution of Engineering and Technology

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