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Low-leakage InGaAs photodiodes grown on gaAs substrates using a graded strained-layer superlattice

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3 Author(s)
Hodson, P.D. ; Plessey Research (Caswell) Limited, Towcester, UK ; Wallis, R.H. ; Davies, J.I.

InxGa1¿xAs layers with In concentrations up to 35% have been grown on GaAs substrates by MOCVD using a GaAs/InxGa1¿xAs superlattice with graded layer thicknesses to accommodate the lattice mismatch. 105 ¿m-diameter PIN diodes fabricated from this material have leakage currents below 1 nA at ¿ 10 V, comparable to devices from lattice-matched material on InP substrates.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 6 )