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Deep levels in GaAs heteroepitaxial layers grown on (100) Ge substrates by MOCVD

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3 Author(s)
Y. Kobayashi ; NTT, Electrical Communications Laboratories, Musashino, Japan ; K. Ikeda ; Y. Shinoda

Deep levels in MOCVD-grown GaAs/(100)Ge were studied by the deep-level Fourier spectroscopy (DLFS) method. Single domain wafers contain EL2 similar to homoepitaxial wafers. EL2 was not observed in antiphase domain wafers, where detected deep traps were found to consist of more than two traps.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 5 )