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Planar TJS lasers fabricated in semi-insulating GaAs substrates for optoelectronic integrated circuits

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6 Author(s)
Ishii, M. ; Optoelectronics Joint Research Laboratory, Kawasaki, Japan ; Kamon, K. ; Shimazu, M. ; Mihara, M.
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TJS lasers with a planar structure were fabricted by growing GaAs-AlGaAs double heterstructures in reverse-mesa-etched shapes in semi-insulting GaAs substrates. Continuous single-mode operation was achieved at temperatures up to 110°C. The minimum threshold current was 25 mA at 25°C.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 5 )