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Anomalous oscillation in depletion-mode MOSFETs at low temperature

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2 Author(s)
C. Carruthers ; University of Edinburgh, Department of Electrical Engineering, Edinburgh, UK ; J. Mavor

Results are presented which show unusual behaviour in silicon, n-channel depletion-mode MOSFETs having phosphorus doping. At 77 K these devices exhibit a low-frequency oscillation whereby the MOSFET channel periodically turns high resistance for a short period.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 5 )