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Application of AlGaAs/GaAs HBTs for wideband direct-coupled amplifiers

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2 Author(s)
Yamauchi, Y. ; NTT Electrical Communications Laboratories, Atsugi, Japan ; Ishibashi, T.

An AlGaAs/GaAs HBT direct-coupled amplifier has been designed and its characteristics described for the first time. The amplifier consists of two HBTs and three resistors without level-shift diodes. A superior amplifier performance of 11 dB gain with a 4 GHz bandwidth was obtained.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 4 )