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CMOS/SIMOX devices having a radiation hardness of 2 Mrad(Si)

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4 Author(s)
Ohno, T. ; NTT Electrical Communications Laboratories, Atsugi, Japan ; Izumi, K. ; Shimaya, M. ; Shiono, N.

Radiation-hardened CMOS/SIMOX devices have been produced by combining SIMOX with a newly developed lateral isolation structure. Even after exposure of these devices up to 2 Mrad(Si) of gamma-ray irradiation, they exhibit sufficient operational characteristics.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 4 )