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Static random-access memory based on self-aligned-gate (Al,Ga)As/n+-GaAs superlattice modulation-doped FETs

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6 Author(s)
Arch, D.K. ; Honeywell Inc., Physics Sciences Center, Bloomington, USA ; Abrokwah, J.K. ; Vold, P.J. ; Fraasch, A.M.
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A 64 bit, fully decoded static random-access memory (SRAM) has been fabricated utilising self-aligned-gate (Al,Ga)As/n+-GaAs superlattice modulation-doped FETs (MODFETs) for the first time. Read access times of 1.1 ns at 270 ¿W/bit and minimum write-enable pulse widths less than 2 ns were demonstrated at room temperature. Typical room-temperature extrinsic transconductances and output conductances of 240 mS/mm and 7 mS/mm, respectively, were observed for the superlattice MODFET devices.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 2 )