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InGaAs PIN photodiodes grown on GaAs substrates by metal organic vapour phase epitaxy

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4 Author(s)
Dental, A.G. ; AT&T Bell Laboratories, Crowford Hill Laboratory, Holmdel, USA ; Campbell, J.C. ; Joyner, C.H. ; Qua, G.J.

We have fabricated and characterised high-efficiency, long-wavelength PIN photodiodes on In0.53Ga0.47As/InP/GaAs wafers grown by metal organic vapour phase epitaxy. Initial measurements indicate that good quality devices can be made in this highly stressed material system (lattice mismatch ~3.8%). These results suggest the possibility of fabricating optoelectronic integrated circuits (OEICs) by combining InGaAs(P) electro-optic devices with high-speed GaAs electronics.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 1 )