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Characteristics of SOI CMOS circuits made in n/n+/n oxidised porous silicon structures

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5 Author(s)
Barla, K. ; Centre National d'Etudes des Télécommunications, Meylan, France ; Bomchil, G. ; Herino, R. ; Monroy, A.
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Porous silicon was formed in the highly doped layer of the n/n+/n structure. After full oxidation of porous silicon, CMOS devices were fabricated in insulated single-crystal silicon islands. Mobilities of 540 cm2/Vs and 180 cm2/Vs are found for N-channel and P-channel transistors with low spread of threshold voltages. Results also indicate very low leakage currents, typically less than 10¿13 A/¿m width. Processed wafers, 100 mm in diameter, are flat without evidence of any warpage.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 24 )