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The fabrication and lasing characteristics for planar surface buried-heterostructure InGaAsP/InP lasers with highly resistive current-blocking layers are reported. Embedding growth was successfully performed by Fe-doping hydride VPE. Single transverse mode operation has been realised in lasers with a narrow active region, without any nonradiative recombination increase, due to an Fe-associated deep level. High-frequency response up to 10GHz was also demonstrated.