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Comparison of amplifier gain enhancement techniques for GaAs MESFET analogue integrated circuits

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3 Author(s)
Larson, L.E. ; Hughes Research Laboratories, Malibu, USA ; Temes, G.C. ; Law, S.

Three different techniques are presented for the enhancement of single-stage amplifier gain of GaAs MESFET analogue integrated circuits. The experimental results show that a two-transistor inverting stage provides the lowest mean voltage gain. The highest gain was achieved with a `self bootstrapped¿ driver and load. These techniques will aid the design of precision alogue integrated circuits in GaAs depletion-mode MESFET technology.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 21 )