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Reduction of threshold current density of 2.2μm GaInAsSb/AlGaAsSb injection lasers

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6 Author(s)
C. Caneau ; AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA ; A. K. Srivastava ; A. G. Dentai ; J. L. Zyskind
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GaInAsSb/AlGaAsSb injection lasers have been fabricated with increased Al concentration in the cladding layers. As a result of improved optical and electrical confinement, the threshold current density Jth for these double heterostructures was a factor of two lower than reported previously; CW operation was achieved up to 235 K.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 19 )