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Transverse beam deflection in a semiconductor laser

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5 Author(s)
Mukai, S. ; Electrotechnical Laboratory, Tsukuba, Japan ; Takabe, H. ; Watanabe, M. ; Itoh, H.
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Switching of a radiation beam of a semiconductor laser in the direction perpendicular to the active layers is realised. The laser has two active layers which are controlled individually and are optically coupled to each other. The far-field peak moves vertically from ¿2° (downward) to 10° (upward) off the facet normal. An analysis of the beam deflection is also given.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 19 )