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New double heterostructure optoelectronic triangular barrier switch (OETBS)

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3 Author(s)
Mand, R.S. ; Toshiba Corporation, Research & Development Center, Kawasaki, Japan ; Ashizawa, Y. ; Nakamura, M.

A new high-speed, high-power optoelectronic device, with a double heterostructure, is proposed and demonstrated. The device has bistable electrical characteristics where light emission occurs in the on-state. The high optical power output was measured to be 209¿W at 100 mA. The transient electrical and optical rise times have been measured to be 500 ps and 1 ns, respectively.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 18 )