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4 Gbit/s GaAs MESFET laser-driver IC

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2 Author(s)
Chen, F.S. ; AT&T Bell Laboratories, Murray Hill, USA ; Bosch, F.

A high-speed laser-driver IC has been fabricated using etched-gate enhancement/depletion-mode MESFET technology. It has been demonstrated that the device is capable of driving 25¿ load with 80 mA modulation current at up to 4 Gbit/s NRZ data rate.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 18 )

Date of Publication:

August 28 1986

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