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Field-induced modulations of refractive index and absorption coefficient in a GaAs/AlGaAs quantum well structure

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4 Author(s)
Nagai, H. ; Hiroshima University, Department of Physical Electronics, Faculty of Engineering, Higashihiroshima, Japan ; Yamanishi, M. ; Kan, Y. ; Suemune, I.

Dispersions of field-induced variations in refractive index and absorption coefficient of a GaAs/AlGaAs quantum well structure are obtained with electroreflectance and transmission measurements at room temperature. The result indicates a possibility of an electroabsorption modulator without frequency chirping, operating at a particular wavelength near an excitonic gap.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 17 )

Date of Publication:

August 14 1986

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