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Monolithic integration of GaAs photoconductors with a field-effect transistor

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3 Author(s)
Lam, D.K.W. ; Communication Research Centre, Department of Communications, Ottawa, Canada ; Syrett, B.A. ; Stubbs, M.G.

A one-stage monolithic integration of a tandem pair of GaAs photoconductors (PCs) with a field-effect transistor (FET) is reported. The PC-FET exhibits a bandwidth in excess of 1 GHz and a gain of 6 dB at midband. A very low noise figure of ~3 dB in the FET is also achieved.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 14 )