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Optimisation of spacer layer thickness in n-AlxGa1-xAs/p+-GaAs heterojunction diodes grown by molecular beam epitaxy

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4 Author(s)
Khamsehpour, B. ; University of Manchester Institute of Science & Technology, Department of Electrical Engineering & Electronics, Manchester, UK ; Singer, K.E. ; van den Berg, J.A. ; Vickerman, J.C.

The effect of an undoped GaAs spacer layer at the heterojunction interface of MBE-grown n-AlxGa1-xAs/p+-GaAs diodes has been investigated by electroluminescence, dynamic secondary ion mass spectrometry and current/voltage measurements. A consistent picture emerges of the role of the spacer layer in accommodating beryllium migration. A simple procedure to optimise the spacer layer thickness is suggested.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 12 )