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Fabrication of an NpM GaInAs/InP bipolar transistor by a two-step epitaxial process

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2 Author(s)
N. Emeis ; Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany ; H. Beneking

A two-step liquid-phase-epitaxial process has been used to fabricate widegap-emitter Schottky collector transistors. After the growth of the first two epitaxial layers the sample has been structured and then overgrown in a second run. In that way a pn homojunction in the widegap material (InP) underneath the extrinsic base-emitter region and a pn heterojunction under the collector have been formed. First transistors fabricated show a current gain of 10 in the common-emitter configuration.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 11 )