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High-frequency noise of InyGa1-yAs/AlxGa1-xAs MODFETs and comparison to GaAs/AlxGa1-xAs MODFETs

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4 Author(s)
Morkoç, H. ; University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, Urbana, USA ; Henderson, T. ; Kopp, W. ; Peng, C.K.

Noise parameter measurements for recently developed 1 μm gate InyGa1-yAs/Al0.15Ga0.85As MODFETs have been performed at 8 GHz at room and cryogenic temperatures. Owing to the relatively small Cgs//gm ratio in these devices compared to identical conventional GaAs/AlGaAs MODFETs, both room- and cryogenic temperature noise figures have been reduced. In addition, the light sensitivity and drift in noise figure at cryogenic temperatures observed in conventional GaAs/AlGaAs MODFETs have been sub stantially reduced.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 11 )

Date of Publication:

May 22 1986

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