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Characterisation of frequency response of 1.5 μm InGaAsP DFB laser diode and InGaAs PIN photodiode by heterodyne measurement technique

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3 Author(s)
Schimpe, R. ; AT&T Bell Laboratories, Holmdel, USA ; Bowers, J.E. ; Koch, T.L.

The frequency response of an InGaAs PIN photodiode and the ratio of the frequency modulation (FM) index to the intensity modulation (IM) index of a 1.5 μm InGaAsP vapour-phase-transported DFB laser diode have been measured by an optical heterodyne measurement technique. From the response of the photodiode to the laser radiation beat frequency, a 20 GHz detector bandwidth is determined. The ratio of the FM and IM indices at 3 mW laser output power per facet decreases from 60 at 100 MHz modulation frequency to 3.3 above 2 GHz.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 9 )

Date of Publication:

April 24 1986

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