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Transient effect in thinned silicon-on-insulator devices

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1 Author(s)
Vu, D.P. ; CNET-CNS-BP 98, Meylan, France

In thin-film silicon-on-insulator devices, electrostatic coupling between the two Si-SiO2 interfaces gives rise to transient drain-source current. This effect should be considered in devising three-dimensional circuits.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 8 )