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Monolithic integrated photoreceiver implemented with GaAs/GaAlAs heterojunction bipolar phototransistor and transistors

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2 Author(s)
H. Wang ; Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, Bagneux, France ; D. Ankri

The first monolithic integrated photodetector-preamplifier implemented with GaAs/GaAlAs heterojunction phototransistor and transistors has been fabricated and tested. This photoreceiver has been designed for local networks of optical transmission links operating at 0.85 ¿m wavelength with multimode fibres. A heterojunction phototransistor (HPT), two heterojunction bipolar transistors (HBTs) and four resistors are integrated in a 0.5 × 0.5 mm2 GaAs chip. The photoreceiver with a 26 k¿ external feedback resistor has a bandwidth of 80 MHz with a transimpedance gain of 7000 V/A. The noise measurements indicate that a minimum detectable power of ¿30 dBm is obtained at 140 Mbit/s for an error rate of 10¿9.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 7 )