By Topic

Injection locking of a 1.3 μm laser diode to an LiNdP4O12 laser yields narrow linewidth emission

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Telle, H.R. ; Physikalsich-Technische Bundesanstalt, Braunschweig, West Germany

A multi-longitudinal-mode InGaAsP laser diode was injection-locked to a low-power LiNdP4O12 laser operating at 1.319 μm. A net gain of 24 dB was measured with -28 dBm of injection power. The beat spectrum between the acousto-optically frequency-shifted LiNdP4O12 laser output and the laser diode output displays a 40 dB carrier to pedestal ratio (in 300 kHz bandwidth) under these conditions.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 3 )