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Junction-current-confinement planar 1.3 μm InGaAsP/InP surface-emitting LEDs

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4 Author(s)
Rezek, E.A. ; TRW Electro Optics Research Centre, Redondo Beach, USA ; Yow, L. ; Burghard, A. ; Figueroa, L.

A new high-power high-efficiency 1.3 μm surface-emitting InGaAsP/InP LED has been obtained by utilising a reverse-biased InP homojunction to achieve efficient confinement of injected current into the InGaAsP emitting area. The devices are grown by a two-step LPE process. At 20 mA, output powers ≫400 μW are obtained; over 1.5 mW is obtained at 100 mA. A 3 dB modulation frequency ≫60 MHz is obtained at 115 mA.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 3 )

Date of Publication:

January 30 1986

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