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High-speed GaInAsSb/GaSb PIN photodetectors for wavelengths to 2.3 μm

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6 Author(s)
Bowers, J.E. ; AT&T Bell Laboratories, Holmdel, USA ; Srivastava, A.K. ; Burrus, C.A. ; Dewinter, M.A.
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Front-illuminated diffused-junction PIN mesa photodiodes for use at wavelengths up to 2.3 μm are described. The impulse response is 160 ps FWHM at -10 V bias, and the external quantum efficiency is 56%. The detector responds to pseudorandom modulation at bit rates up to 2 Gbit/s.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 3 )

Date of Publication:

January 30 1986

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