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Current dependence of forward delay time of bipolar transistors

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2 Author(s)
Hébert, F. ; University of Waterloo, Electrical Engineering Department, Waterloo, Canada ; Roulston, D.J.

The modelling of the high current falloff of the transition frequency f1 of bipolar transistors, relies on the definition of a current-dependent delay time. This current dependence of the forward delay time Tf (normal active mode), as expressed in some computer-aided design programs, is considered in the letter.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 3 )

Date of Publication:

January 30 1986

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