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Electrical characteristics of silicon MOS structure formed by a novel low-temperature thermal oxidation method

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3 Author(s)
Yue, J.-H. ; Tokyo Institute of Technology, Department of Electrical and Electronic Engineering, Tokyo, Japan ; Uchida, Y. ; Matsumura, M.

Electrical characteristics of the native silicon-dioxide layer and its interface formed by a novel low-temperature thermal oxidation method have been evaluated. The resistivity and breakdown field strength were more than 1014 ¿cm and 4 MV/cm, respectively. The interface state density had a V-shaped distribution form and its minimum value was about 1011 cm2 eV.

Published in:

Electronics Letters  (Volume:22 ,  Issue: 1 )

Date of Publication:

January 2 1986

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