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GaAs IMPATT diodes have been developed to deliver high c.w. powers in K-band. Single-drift and double-drift flat profile and single-drift Read profile designs have been evaluated. The highest conversion efficiencies were obtained with the high/low Read doping profile. A maximum c.w. power of 3.1 W has been measured at 19.6 GHz with 18.6% efficiency for these devices.