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Comparison of GaAs IMPATT designs for 20 GHz

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3 Author(s)
J. J. Berenz ; Varian Associates, Palo Alto, USA ; M. Vichr ; F. B. Fank

GaAs IMPATT diodes have been developed to deliver high c.w. powers in K-band. Single-drift and double-drift flat profile and single-drift Read profile designs have been evaluated. The highest conversion efficiencies were obtained with the high/low Read doping profile. A maximum c.w. power of 3.1 W has been measured at 19.6 GHz with 18.6% efficiency for these devices.

Published in:

Electronics Letters  (Volume:15 ,  Issue: 21 )