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Pumped Schottky diodes with noise temperatures of less than 100 K at 115 GHz

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3 Author(s)
Keen, Nigel J. ; Max-Planck-Institut fÿr Radioastronomie, Bonn, West Germany ; Kelly, William M. ; Wrixon, Gerard T.

New Schottky-barrier diodes, with an epitaxial layer thickness of < 1000 Å and doping 2.5×1016 cm¿3, yield a mixer noise temperature of 98 K at 115 GHz. The diodes have a diameter of 1.8 ¿m, and show repeatable performance. Measurements indicate negligible capacitance variation to at least +0.2 V. The noise temperature is competitive with values reported for Josephson and quasiparticle junctions.

Published in:

Electronics Letters  (Volume:15 ,  Issue: 21 )

Date of Publication:

October 11 1979

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