By Topic

GaAs f.e.t. transimpedance front-end design for a wideband optical receiver

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
K. Ogawa ; Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA ; E. L. Chinnock

A GaAs f.e.t. transimpedance front-end amplifier was built and operated as part of a regenerator at 274 Mb/s. The noise characteristics were optimised for operation with a Ge photodiode at 1.32 ¿m, but were measured at 0.82 ¿m to compare Si and Ge photodiodes. The amplifier input capacitance was 3.2 pF with the Si p-i-n diode and 4.6 pF with the Ge diode. At 0.82 ¿m, we measured a sensitivity for 10¿9 error rate of about ¿35 dBm with the Si diode and ¿32 dBm with the Ge diode. We predict a sensitivity of ¿34 dBm at 1.32 ¿m.

Published in:

Electronics Letters  (Volume:15 ,  Issue: 20 )