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Changes in the thermal oxidation of gallium arsenide induced by ion implantation

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2 Author(s)
Butcher, D.N. ; University of Surrey, Department of Electronic and Electrical Engineering, Guildford, UK ; Sealy, B.J.

The effect of ion implantation on the growth of oxides formed on gallium arsenide in oxygen at 510°C for 2¿ h has been studied. Thirteen ion species were implanted at doses of 1×1015 ions cm¿2. Potassium, nitrogen and fluorine produced significant increases in oxidation, whereas calcium, aluminium and nickel had the opposite effect.

Published in:

Electronics Letters  (Volume:15 ,  Issue: 2 )

Date of Publication:

January 18 1979

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