Evaluation of 300 mm High Resistivity SOI UNIBOND material for RF applications up to millimeter wave using 65 nm CMOS SOI technology

In this paper, 300 mm high resistivity (HR) SOI UNIBONDtrade material is evaluated using RF component and millimeter wave (MMW) function realized in advanced 65 nm HR SOI CMOS technology. The goal is to investigate the insulating behavior, in term of resistivity homogeneity all over the wafer, of 300 mm wafer provided by SOITEC and to offer a benchmarking with well known 200 mm material. For this purpose a methodology based on high frequency measurement is proposed.