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The body thickness dependence of impact ionization for a multiple-gate fin field-effect transistor (FinFET) is presented. It is found that the nonlocal effect and series resistance are distinct features of reduced impact ionization in the multiple-gate FinFET, and these effects become more pronounced as the body thickness decreases. The impact ionization constant Bi is newly extracted by considering the series resistance and nonlocal carrier heating effect. A refined analytical substrate current model is developed from the previous model and revamped for multiple-gate devices. The new substrate current model is then compared with measurement data, and good agreement is observed.