Referenced Items are not available for this document.
AlGalnP-based visible 650-nm GalnP-AlGalnP resonant-cavity light-emitting diodes (RCLEDs) with high-temperature stability were fabricated by wafer-bonding techniques on Si substrates. In this study, the metal-bonding RCLEDs (MBRCLEDs) devices were designed with 84-mum apertures for light output. The MBRCLEDs with a maximum wall-plug efficiency of 13.7% were demonstrated at an injection current of 2.5 mA. In addition, the improved heat sinking of MBRCLEDs led to lower junction temperature, and resulted in a very low power decay of 0.31 dB from room temperature to 100degC at an injection current of 20 mA.
Published in:
Photonics Technology Letters, IEEE
(Volume:19
,
Issue:
14
)
Date of Publication: July15, 2007
- Page(s):
- 1060 - 1062
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 9597573
- Digital Object Identifier :
- 10.1109/LPT.2007.899445
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 25 June 2007
- Issue Date :
- July15, 2007
- Sponsored by :
- IEEE Photonics Society
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